The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum-dot lasers
Identifieur interne : 00C239 ( Main/Repository ); précédent : 00C238; suivant : 00C240The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum-dot lasers
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Abstract
Temperature-dependent lasing characteristics of InAs/InGaAs quantum-dot lasers operating at 1.3 μm are theoretically analyzed. In particular, we investigated the effect of different carrier distribution models, free and bound electron-hole pairs, on gain and the lasing characteristics. In contrast to lasers of higher dimensionality, the results of this work indicate that it is the bound electron-hole pairs (excitons) that mainly contribute to gain in these lasers. However, the ratio of the number of free carriers to excitons is very important and significantly affects the threshold current and its temperature dependence. Our calculations show that the characteristic temperature T0 drops from 356 K when only excitons are included in the model, to a more realistic 83 K when both excitons and free carriers are considered. © 2003 American Institute of Physics.
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Pikal</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Wyoming, Laramie, Wyoming 82072</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wyoming</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Wyoming, Laramie</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0284273</idno><date when="2003-06-30">2003-06-30</date><idno type="stanalyst">PASCAL 03-0284273 AIP</idno><idno type="RBID">Pascal:03-0284273</idno><idno type="wicri:Area/Main/Corpus">00D210</idno><idno type="wicri:Area/Main/Repository">00C239</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Current density</term><term>Excitons</term><term>Experimental study</term><term>Fermi level</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Semiconductor quantum dots</term><term>quantum dot lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>7321L</term><term>4260L</term><term>7135G</term><term>7867H</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Exciton</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Densité courant</term><term>Niveau Fermi</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Temperature-dependent lasing characteristics of InAs/InGaAs quantum-dot lasers operating at 1.3 μm are theoretically analyzed. In particular, we investigated the effect of different carrier distribution models, free and bound electron-hole pairs, on gain and the lasing characteristics. In contrast to lasers of higher dimensionality, the results of this work indicate that it is the bound electron-hole pairs (excitons) that mainly contribute to gain in these lasers. However, the ratio of the number of free carriers to excitons is very important and significantly affects the threshold current and its temperature dependence. Our calculations show that the characteristic temperature T<sub>0</sub> drops from 356 K when only excitons are included in the model, to a more realistic 83 K when both excitons and free carriers are considered. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>26</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The role of free carriers and excitons on the lasing characteristics of InAs/InGaAs quantum-dot lasers</s1></fA08><fA11 i1="01" i2="1"><s1>DIKSHIT (A.)</s1></fA11><fA11 i1="02" i2="1"><s1>PIKAL (J. 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